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  pulse-width-modulation control circuits az494a/c data sheet 1 apr. 2006 rev. 1. 2 bcd semiconductor manufacturing limited general description the az494a/c is a voltage mode pulse width modula- tion switching regulator control circuit designed prima- rily for power supply control. the az494a/c consists of a reference voltage circuit, two error amplifiers, an on-c hip adjustable oscillator, a dead-time control (dtc) co mparator, a pulse-steering control flip-flop, and an out put control circuit. the pre- cision of voltage reference (v ref ) is improved up to 1% through trimming and this provides a better output voltage regulation. the az494a/c provides for push- pull or single-ended output operation, which can be selected through the output control. the difference between az4 94a and az494c is that they have 4.95v and 5v reference voltage respectively. the az494a/c is available in standard packages of dip-16 and soic-16. features stable 4.95v/5v reference voltage trimmed to 1.0% accuracy uncommitted output tr for 200ma sink or source current single-end or push-pull operation selected by output control internal circuitry prohibits double pulse at either output complete pwm control circuit with variable duty cycle on-chip oscillator with master or slave opera- tion applications smps back light inverter charger figure 1. package types of az494a/c soic-16 dip-16
pulse-width-modulation control circuits az494a/c data sheet 2 apr. 2006 rev. 1. 2 bcd semiconductor manufacturing limited figure 2. pin configuration of az494a/c (top view) figure 3. functional block diagram of az494a/c m/p package (soic-16/dip-16) 1in + 1in - feedback dtc ct rt gnd c1 2in + 2in - ref output ctrl v cc c2 e2 e1 1 2 3 4 5 6 7 89 10 11 12 13 14 15 16 pin configuration functional block diagram signal for output control output function v i = gnd single-ended or parallel output v i = v ref normal push-pull operation output function control table oscillator 0.12v 5 6 ct rt 4 dtc 1in + 1in - 2in + 2in - 1 2 16 15 error amplifier 1 error amplifier 2 dead-time control comparator d ck 3 feedback pwm comparator pulse-steering flip-flop output ctrl 13 reference regulator q1 q2 12 10 11 9 8 c1 e1 c2 e2 v cc ref gnd 14 7 0.7ma + + + +
pulse-width-modulation control circuits az494a/c data sheet 3 apr. 2006 rev. 1. 2 bcd semiconductor manufacturing limited ordering information package temperature range part number marking id packing type tin lead lead free tin lead lead free soic-16 -40 to 85 o c az494am az494am-e1 az494am az494am-e1 tube az494amtr az494amtr-e1 az494am az494am-e1 tape & reel az494cm az494cm-e1 az494cm az494cm-e1 tube az494cmtr AZ494CMTR-E1 az494cm az494cm-e1 tape & reel dip-16 az494ap az494ap-e1 az494ap az494ap-e1 tube az494cp az494cp-e1 az494cp az494cp-e1 tube bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant. circuit type reference voltage e1: lead free blank: tin lead az494 - tr: tape and reel blank: tube package m: soic-16 p: dip-16 a: 4.95v c: 5.0v
pulse-width-modulation control circuits az494a/c data sheet 4 apr. 2006 rev. 1. 2 bcd semiconductor manufacturing limited note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operat ion of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolute maximum ratings"for extended periods may affect device reliability. note 2: all voltage values are with respect to the network ground terminal. note 3: maximum power dissipation is a function of t j (max), r ja and t a . the maximum allowable power dissi- pation at any allowable am bient temperature is p d = ( t j (max) - t a )/r ja . operating at the absolute maximum t j of 150 o c can affect reliability. parameter symbol value unit supply voltage (note 2) v cc 40 v amplifier input voltage v i -0.3 to v cc + 0.3 v collector output voltage v o 40 v collector output current i o 250 ma package thermal impedance (note 3) r ja m package 73 o c/w p package 67 lead temperature 1.6mm from case for 10 seconds 260 o c storage temperature range t stg -65 to 150 o c esd rating (machine model) 200 v recommended operating conditions parameter symbol min typ max unit supply voltage v cc 71536v collector output voltage v c1 , v c2 30 36 v collector output current (each transistor) i c1 , i c2 200 ma amplifier input voltage v i 0.3 v cc - 2 v current into feedback terminal i fb 0.3 ma reference output current i ref 10 ma timing capacitor c t 0.00047 0.001 10 f timing resistor r t 1.8 30 500 k ? oscillator frequency f osc 1.0 40 200 khz pwm input voltage (pin 3, 4, 14) 0.3 5.3 v operating free-air temperature t a -40 85 o c absolute maximum ratings (note 1)
pulse-width-modulation control circuits az494a/c data sheet 5 apr. 2006 rev. 1. 2 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit reference section output reference voltage for az494a v ref i ref =1ma 4.90 4.95 5.0 v i ref =1ma, t a = -40 to 85 o c 4.85 4.95 5.05 v output reference voltage for az494c v ref i ref =1ma 4.95 5.0 5.05 v i ref =1ma, t a = -40 to 85 o c 4.9 5.0 5.1 v line regulation r line v cc = 7v to 36v 2 25 mv load regulation r load i ref =1ma to 10ma 1 15 mv short-circuit output current i sc v ref = 0v 10 35 50 ma oscillator section oscillator frequency f osc c t =0.001 f, r t =30k ? ,40 khz c t =0.01 f, r t =12k ? 9.2 10 10.8 c t =0.01 f, r t =12k ? , t a = -40 to 85 o c 9.0 12 frequency change with temperature ? f / ? tc t =0.01 f, r t =12k ? , t a = -40 to 85 o c 1% dead-time control section input bias current i bias v cc =15v, v4= 0 to 5.25v -2 -10 a maximum duty cycle, d(max) v cc =15v, v4= 0v, pin 13= v ref 45 % input threshold voltage v ith zero duty cycle 3 3.3 v maximum duty cycle 0 error-amplifier section input offset voltage v io v3 = 2.5v 2 10 mv input offset current i io v3 = 2.5v 25 250 na input bias current i bias v3 = 2.5v 0.2 1 a common-mode input voltage range v cm v cc =7v to 36v -0.3 v cc -2 v open-loop voltage gain g vo v o =0.5v to 3.5v 70 95 db unity-gain bandwidth bw 650 khz common-mode rejection ratio cmrr 65 80 db output sink current (feedback) i sink v id = -15mv to -5v, v3 = 0.7v -0.3 -0.7 ma output source current (feedback) i source v id =15mv to 5v v3 = 3.5v 2ma t a = 25 o c, v cc =20v, f=10khz unless otherwise noted. electrical characteristics
pulse-width-modulation control circuits az494a/c data sheet 6 apr. 2006 rev. 1. 2 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit pwm comparator section input threshold voltage v ith zero duty cycle 4 4.5 v input sink current i sink v3 = 0.7v -0.3 -0.7 ma output section output saturation voltage common emitter v ce (sat) v e = 0v, i c =200ma 1.1 1.3 v emitter follower v cc (sat) v cc = 15v, i e = -200ma 1.5 2.5 collector off-state current i c (off) v ce = 36v, v cc =36v 2 100 a emitter off-state current i e (off) v cc = v c = 36v, v e = 0 -100 a total device supply current i cc pin 6 = v ref , v cc =15v 6 10 ma output switching characteristics rise time t r common emitter common collector 100 200 ns fall time t f common emitter common collector 25 100 ns electrical characteristics (continued)
pulse-width-modulation control circuits az494a/c data sheet 7 apr. 2006 rev. 1. 2 bcd semiconductor manufacturing limited voltage at ct voltage at c2 voltage at c1 v cc 0v v cc 0v 0v dtc threshold voltage threshold voltage feedback 0.7v duty cycle 0% max 0% figure 4. operational test circuit and waveforms voltage waveforms test circuit 12k ? 0.01uf 50k ? dtc feedback rt ct 1in+ 1in- 2in+ 2in- output ctrl test inputs 4 3 6 5 1 2 16 15 13 c1 e1 c2 e2 ref gnd v cc 14 10 11 9 8 12 v cc = 20v 150 ? 4w 150 ? 4w output 1 output 2 7 parametr measurement information
pulse-width-modulation control circuits az494a/c data sheet 8 apr. 2006 rev. 1. 2 bcd semiconductor manufacturing limited v ref amplifier under test feedback v i other amplifier + + each output circuit c l = 15pf (see note a) 68 ? 4w 20v output 90% 10% 10% 90% t f t r each output circuit c l = 15pf (see note a) 68 ? 4w 20v output 90% 10% 10% 90% t f t r figure 5. error amplifier characteristics figure 6. common-emitter configuration figure 7. emitter-follower configuration note a: c l includes probe and jig capacitance. note a: c l includes probe and jig capacitance. parametr measurement information (continued)
pulse-width-modulation control circuits az494a/c data sheet 9 apr. 2006 rev. 1. 2 bcd semiconductor manufacturing limited figure 8. oscillator frequency vs. rt and ct figure 9. error amplifier small-signal voltage gain vs. frequency 1 10 100 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 100 v cc =20v ? v o =3v t a =25 o c voltage gain (db) frequency (hz) typical performance characteristics 1k 10k 100k 1m 1k 10k 100k 0.1 f 0.01 f f - oscillator frequency (hz) rt - timing resistance ( ? ) 0.001 f v cc =20v t a =25 o c
pulse-width-modulation control circuits az494a/c data sheet 10 apr. 2006 rev. 1. 2 bcd semiconductor manufacturing limited typical applications + + + + 12 11 8 3 2 14 15 1 16 5 6 10 13 9 7 4 50 10v 50 10v 0.001 50 50v 0.1 1mh 2a 5.1k 0.1 47k 1m 150 47 ksa1010 5.1k 5.1k 150 (v o =5v, i o =1a) (v i =10v to 40v) gnd v i (+) v i (-) v o az494a v cc c2 c1 feed back 1in- ref 2in- 1in+ 2in+ ct rt e2 output control e1 gnd dtc figure 10. pulse width modulated step-down converter
pulse-width-modulation control circuits az494a/c data sheet 11 apr. 2006 rev. 1. 2 bcd semiconductor manufacturing limited mechanical dimensions soic-16 unit: mm(inch) 7 1 0 . 0 0 0 ( 0 . 3 9 4 ) 6.040(0.238) 0.406(0.016) 20:1 a 1.650(0.065) 0.700(0.028) 7 1 5 b c 1 . 0 0 0 ( 0 . 0 3 9 ) s 1.000(0.039) 0.200(0.008) 20:1 b c 50:1 c-c 0 . 2 5 0 ( 0 . 0 1 0 ) 0 . 2 0 0 ( 0 . 0 0 8 ) m i n 0.500(0.020) 0.600(0.024) 0 . 2 5 0 ( 0 . 0 1 0 ) depth 0.060(0.002) 0.100(0.004) 2.000(0.079) 1 . 3 0 0 ( 0 . 0 5 1 ) 1.000(0.039) 1.270(0.050) depth 0.200(0.008) 0 . 2 5 0 ( 0 . 0 1 0 ) 0 . 1 5 0 ( 0 . 0 0 6 ) r0.200(0.008) r0.200(0.008) 0 . 2 0 3 ( 0 . 0 0 8 ) a 3.940(0.155) 3 8 9 . 5 8 8 7 0.400(0.016) 45
pulse-width-modulation control circuits az494a/c data sheet 12 apr. 2006 rev. 1. 2 bcd semiconductor manufacturing limited mechanical dimens ions (continued) dip-16 unit: mm(inch) 18.800(0.740) 0.254(0.010) 2.540(0.100) 6 4 1.524(0.060)typ 5 4 6 3.000(0.118) depth 0.050(0.002) 0.150(0.006) 0.700(0.028) 19.200(0.756) r0.750(0.030) 6.200(0.244) 3.000(0.118) 3.600(0.142) 3.710(0.146) 4.310(0.170) 0.510(0.020)min 0.360(0.014) 0.560(0.022) 6.600(0.260) 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 3.200(0.126) 3.600(0.142) 7.620(0.300)typ typ
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office 27b, tower c, 2070, middle shen nan road, shenzhen 518031, china tel: +86-755-8368 3987, fax: +86-755-8368 3166 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808, fax: +886-2-2656 2806 usa office bcd semiconductor corporation 3170 de la cruz blvd., suite 105, santa clara, ca 95054-2411, u.s.a tel: +1-408-988 6388, fax: +1-408-988 6386 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com


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